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HLB124E спецификации: Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
Аналогичные HLB124E
- HLB120A
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB121I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB123I
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB123T
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
- HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies
HLB124E Datasheet и спецификация
Производитель : Hi Sincerity
Упаковка : TO-220
Pins : 3
Темп. диапазон : Минимум 0 °C | Макс 0 °C
Размер : 40 KB
Заявка : Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
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