MJE13003 спецификации: NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V

Аналогичные MJE13003

MJE13002A
- Silicon NPN triple diffused MESA type. Electronic transformers, power switching circuit. Vcbo=600V, Vceo=400V, Vebo=9V
MJE13003
- NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V
MJE13005B
- NPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9V

MJE13003 Datasheet и спецификация

Производитель : WingShing

Упаковка : TO-126

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 29 KB

Заявка : NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V