BU407 спецификации: Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.

Аналогичные BU407

BU406
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
BU406D
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V.
BU406H
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
BU407
- Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.
BU408
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.

BU407 Datasheet и спецификация

Производитель : WingShing

Упаковка : TO-220

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 70 KB

Заявка : Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.