Путь:OKDatasheet > Полупроводниковые Datasheet > Usha Datasheet > MJE3055T
MJE3055T спецификации: NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
Производитель : Usha
Упаковка : TO-220
Pins : 3
Темп. диапазон : Минимум -65 °C | Макс 150 °C
Размер : 52 KB
Заявка : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.