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2N6517 спецификации: High voltage transistor. Collector-emitter voltage Vceo = 350V. Collector-base voltage Vcbo = 350V. Collector dissipation Pc(max) = 625mW.
Аналогичные 2N6517
- 2N6515
- High voltage transistor. Collector-emitter voltage Vceo = 250V. Collector-base voltage Vcbo = 250V. Collector dissipation Pc(max) = 625mW.
- 2N6516
- High voltage transistor. Collector-emitter voltage Vceo = 250V. Collector-base voltage Vcbo = 250V. Collector dissipation Pc(max) = 625mW.
- 2N6517
- High voltage transistor. Collector-emitter voltage Vceo = 350V. Collector-base voltage Vcbo = 350V. Collector dissipation Pc(max) = 625mW.
- 2N6518
- High voltage transistor. Collector-emitter voltage Vceo = -250V. Collector-base voltage Vcbo = -250V. Collector dissipation Pc(max) = 0.625W.
- 2N6519
- High voltage transistor. Collector-emitter voltage Vceo = -300V. Collector-base voltage Vcbo = -300V. Collector dissipation Pc(max) = 0.625W.
2N6517 Datasheet и спецификация
Производитель : Usha
Упаковка :
Pins : 3
Темп. диапазон : Минимум 0 °C | Макс 150 °C
Размер : 51 KB
Заявка : High voltage transistor. Collector-emitter voltage Vceo = 350V. Collector-base voltage Vcbo = 350V. Collector dissipation Pc(max) = 625mW.
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