Аналогичные UT7Q512K-UCX

  • UT7Q512
    • 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
  • UT7Q512
    • 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
  • UT7Q512K-UCA
    • "512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped."
  • UT7Q512K-UCA
    • 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.
  • UT7Q512K-UCC
    • 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.
  • UT7Q512K-UCX
    • 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.
  • UT7Q512K-UPC
    • 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
  • UT7Q512K-UPC
    • 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.

UT7Q512K-UCX Datasheet и спецификация

Производитель : UTMC 

Упаковка : Ceramic flatpack 

Pins : 32 

Темп. диапазон : Минимум -55 °C | Макс 125 °C

Размер : 117 KB

Заявка : 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option. 

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