Путь:okDatasheet > Полупроводниковые Datasheet > Turbo IC Datasheet > Turbo IC-9

3 28LV256PM-3 28C64ATI-4 28LV64JC-4 28C256AJC-4 TU24C128CS3 28C64AJC-2 28LV64PM-5 28LV64SI-6 28LV256TI-5 28C64ATM-3 28C64ASC-4 28C256AJC-2 28C256ATI-4 28C64AJI-3 28C64ASM-4 28C256ATI-3 28C64API-2 TU24C32CP3 28LV64JI-4 28LV64TI-3 29C010JI-3 28C256ASC-2 28C64ATM-4 TU25C128PC-2.7 TU

Turbo IC Информация Каталог-9

Name componentПроизводительЗаявка
28C64ASM-2 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
28C64ASM-3 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28LV256PM-3 Turbo ICLow voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28C64ATI-4 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28LV64JC-4 Turbo ICLow voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C256AJC-4 Turbo ICHigh speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
TU24C128CS3 Turbo ICCMOS IIC 2-wire bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V.
28C64AJC-2 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
28LV64PM-5 Turbo ICLow voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
28LV64SI-6 Turbo ICLow voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
28LV256TI-5 Turbo ICLow voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
28C64ATM-3 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28C64ASC-4 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C256AJC-2 Turbo ICHigh speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
28C256ATI-4 Turbo ICHigh speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
28C64AJI-3 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28C64ASM-4 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C256ATI-3 Turbo ICHigh speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28C64API-2 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
TU24C32CP3 Turbo ICCMOS IIC 2-wire bus. 32K electrically erasable programmable ROM. 4K x 8 bit EEPROM. Voltage 2.7V to 5.5V.
28LV64JI-4 Turbo ICLow voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28LV64TI-3 Turbo ICLow voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
29C010JI-3 Turbo ICHigh speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
28C256ASC-2 Turbo ICHigh speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
28C64ATM-4 Turbo ICHigh speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
TU25C128PC-2.7 Turbo ICCMOS SPI bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V.
TU25C256PI Turbo ICCMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V.
28C256APC-3 Turbo ICHigh speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28LV64SC-4 Turbo ICLow voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28LV256JI-3 Turbo ICLow voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.

1 2 3 4 5 6 7 8 9