28LV64SI-6 спецификации: Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.

Аналогичные 28LV64SI-6

28LV256PC-3
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28LV64TM-3
- Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28LV256SI-3
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28LV64JM-5
- Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
28LV64TI-6
- Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
28LV256TM-4
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
28LV256SM-6
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
28LV256PI-5
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.

28LV64SI-6 Datasheet и спецификация

Производитель : Turbo IC

Упаковка : SOIC

Pins : 28

Темп. диапазон : Минимум -40 °C | Макс 85 °C

Размер : 46 KB

Заявка : Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.