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Аналогичные TC1030EOD

  • TC1014-2.5VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1014-2.7VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1014-3.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V.
  • TC1014-3.3VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V.
  • TC1014-5.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V.
  • TC1015-2.5VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1015-2.7VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1015-3.0VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V.

TC1030EOD Datasheet и спецификация

Производитель : TelCom Semiconductor 

Упаковка : SOIC 

Pins : 14 

Темп. диапазон : Минимум -40 °C | Макс 85 °C

Размер : 29 KB

Заявка : Linear building block - quad low power operational amplifier. 

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