RC10S08G спецификации: Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 10 A.

Аналогичные RC10S08G

RC10S01
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
RC10S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
RC10S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
RC10S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
RC10S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
RC10S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
RC10S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.
RC10S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.

RC10S08G Datasheet и спецификация

Производитель : Shanghai Sunrise

Упаковка :

Pins : 0

Темп. диапазон : Минимум -50 °C | Макс 150 °C

Размер : 15 KB

Заявка : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 10 A.