Аналогичные STH8NA60FI

STH8N80
- Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C
STH8N80FI
- Power dissipation 70 W Transistor polarity N Channel Current Id cont. 5.1 A Current Idm pulse 35 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R
STH8NA60FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
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STH8NA60FI Datasheet и спецификация

Производитель : ST Microelectronics

Упаковка :

Pins : 0

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 136 KB

Заявка : N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS