Аналогичные STH6N100

STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH6N100 Datasheet и спецификация

Производитель : ST Microelectronics

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Темп. диапазон : Минимум 0 °C | Макс 0 °C

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Заявка : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS