STD2NB80 спецификации: N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET

Аналогичные STD2NB80

STD20N03L
- Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C
STD20N06
- TRANSISTOR MOSFET TO-252
STD20NE03L
- N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STD20NE06
- N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STD20NF10
- N-CHANNEL 100V - 0.038 OHM - 30A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
STD25NE03L
- N-CHANNEL 30V - 0.019 OHM - 25A - TO-251/TO-252 STRIPFET POWER MOSFET
STD25NF10
- N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
STD25NF10L
- N-CHANNEL 100V - 0.030 OHM - 25A DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET

STD2NB80 Datasheet и спецификация

Производитель : ST Microelectronics

Упаковка :

Pins : 0

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 101 KB

Заявка : N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET