Аналогичные LET9002

  • LET9002
    • RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
  • LET9006
    • RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
  • LET9045S
    • RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
  • LET9060S
    • RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
  • LET9085
    • RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
  • LET9130
    • RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY

LET9002 Datasheet и спецификация

Производитель : ST Microelectronics 

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Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 43 KB

Заявка : RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE 

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