EC3H02C спецификации: NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications

Аналогичные EC3H02C

EC3H01B
- NPN Epitaxial Planar Silicon Transistor VHF Band Low-Noise Amplifer and OSC Applications
EC3H02C
- NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
EC3H03B
- NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications
EC3H04B
- NPN Epitaxial Planar Type Silicon Transistor
EC3H04C
- NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications
EC3H05B
- NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
EC3H06B
- NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications

EC3H02C Datasheet и спецификация

Производитель : SANYO

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Темп. диапазон : Минимум 0 °C | Макс 0 °C

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Заявка : NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications