2SD1012 спецификации: "NPN epitaxial planar silicon transistor, low-voltage larg-current amp application"

Аналогичные 2SD1012

2SD1012
- "NPN epitaxial planar silicon transistor, low-voltage larg-current amp application"
2SD1012
- NPN epitaxial planar silicon transistor, low-voltage larg-current amp application
2SD1046
- NPN planar silicon transistor, for LF power amp, 50W output, large power switching
2SD1047
- NPN triple diffused planar silicon transistor, 140V/12A, AF 60W output application
2SD1048
- NPN epitaxial planar silicon transistor, for general-purpose AF application
2SD1060
- NPN planar silicon transistor, 50V/5A, switching application
2SD1061
- NPN epitaxial planar silicon transistor, 50V/7A, switching application
2SD1062
- NPN epitaxial planar silicon transistor, 50V/12A, switching application

2SD1012 Datasheet и спецификация

Производитель : SANYO

Упаковка : 2033

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 126 KB

Заявка : "NPN epitaxial planar silicon transistor, low-voltage larg-current amp application"