2SC3576 спецификации: NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application

Аналогичные 2SC3576

2SC3000
- NPN epitaxial planar silicon transistor, HF amp application
2SC3038
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3039
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3042
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3068
- NPN transistor for low-frequency general-purpose amplifier applications
2SC3069
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3070
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3071
- NPN transistor, high hFE, low-frequency general-purpose amplifier applications

2SC3576 Datasheet и спецификация

Производитель : SANYO

Упаковка : 2033

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 92 KB

Заявка : NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application