2SB632 спецификации: PNP epitaxial planar silicon transistor, 25V/2A low frequency power amp application

Аналогичные 2SB632

2SB631
- PNP epitaxial planar silicon transistor, 100V/1A low frequency power amp application
2SB631K
- PNP epitaxial planar silicon transistor, 120V/1A low frequency power amp application
2SB632
- PNP epitaxial planar silicon transistor, 25V/2A low frequency power amp application
2SB632K
- PNP epitaxial planar silicon transistor, 35V/2A low frequency power amp application
2SB698
- PNP epitaxial planar silicon transistor, 1W AF output, electronic governor, DC-DC converter application

2SB632 Datasheet и спецификация

Производитель : SANYO

Упаковка : 2009B

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 261 KB

Заявка : PNP epitaxial planar silicon transistor, 25V/2A low frequency power amp application