F1016 спецификации: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Аналогичные F1016

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1016 Datasheet и спецификация

Производитель : Polyfet RF

Упаковка :

Pins : 4

Темп. диапазон : Минимум -65 °C | Макс 150 °C

Размер : 45 KB

Заявка : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor