VTB6061CIE спецификации: Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux.

Аналогичные VTB6061CIE

VTB6061
- Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K.
VTB6061B
- Process photodiode. Isc = 35 microA, Voc = 420 mV at H = 100 fc, 2850 K.
VTB6061CIE
- Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux.
VTB6061J
- Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K.
VTB6061UV
- Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K.
VTB6061UVJ
- Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K.

VTB6061CIE Datasheet и спецификация

Производитель : PerkinElmer

Упаковка : TO-8

Pins : 2

Темп. диапазон : Минимум -54 °C | Макс 50 °C

Размер : 32 KB

Заявка : Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux.