2EZ39 спецификации: Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 39.0 V. Test current Izt = 12.8 mA.

Аналогичные 2EZ39

2EZ30
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 30.0 V. Test current Izt = 16.6 mA.
2EZ30
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 30.0 V. Test current Izt = 16.6 mA.
2EZ33
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 33.0 V. Test current Izt = 15.1 mA.
2EZ33
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 33.0 V. Test current Izt = 15.1 mA.
2EZ36
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 36.0 V. Test current Izt = 13.9 mA.
2EZ39
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 39.0 V. Test current Izt = 12.8 mA.

2EZ39 Datasheet и спецификация

Производитель : PanJit

Упаковка : D0-15

Pins : 2

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 134 KB

Заявка : Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 39.0 V. Test current Izt = 12.8 mA.