2EZ200 спецификации: Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 200.0 V. Test current Izt = 2.5 mA.

Аналогичные 2EZ200

2EZ20
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 20.0 V. Test current Izt = 25.0 mA.
2EZ200
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 200.0 V. Test current Izt = 2.5 mA.
2EZ200
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 200.0 V. Test current Izt = 2.5 mA.
2EZ22
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 22.0 V. Test current Izt = 22.8 mA.
2EZ24
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 24.0 V. Test current Izt = 20.8 mA.
2EZ27
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 27.0 V. Test current Izt = 18.5 mA.

2EZ200 Datasheet и спецификация

Производитель : PanJit

Упаковка : D0-15

Pins : 2

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 134 KB

Заявка : Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 200.0 V. Test current Izt = 2.5 mA.