2EZ110 спецификации: Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.

Аналогичные 2EZ110

2EZ100
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 100.0 V. Test current Izt = 5.0 mA.
2EZ11
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 11.0 V. Test current Izt = 45.5 mA.
2EZ110
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.
2EZ110
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.
2EZ12
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 12.0 V. Test current Izt = 41.5 mA.
2EZ13
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 13.0 V. Test current Izt = 38.5 mA.
2EZ14
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 14.0 V. Test current Izt = 35.7 mA.
2EZ140
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 140.0 V. Test current Izt = 3.6 mA.

2EZ110 Datasheet и спецификация

Производитель : PanJit

Упаковка : D0-15

Pins : 2

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 134 KB

Заявка : Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.