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Аналогичные 1N5950B

  • 1N5926B
    • Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 11V. Test current Izt = 34.1 mA.
  • 1N5927B
    • Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 12V. Test current Izt = 31.2 mA.
  • 1N5928B
    • Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 13V. Test current Izt = 28.8 mA.
  • 1N5929B
    • Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 15V. Test current Izt = 25 mA.
  • 1N5930B
    • Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 16V. Test current Izt = 23.4 mA.
  • 1N5931B
    • Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 18V. Test current Izt = 20.8 mA.
  • 1N5932B
    • Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 20V. Test current Izt = 18.7 mA.
  • 1N5932B
    • Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 20V. Test current Izt = 18.7 mA.

1N5950B Datasheet и спецификация

Производитель : PanJit 

Упаковка :  

Pins : 2 

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 89 KB

Заявка : Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 110V. Test current Izt = 3.4 mA. 

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