Аналогичные 1N5367B

  • 1N5348B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
  • 1N5349B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
  • 1N5350B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5352B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
  • 1N5354B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
  • 1N5355B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5367B Datasheet и спецификация

Производитель : PanJit 

Упаковка : DO-201AE 

Pins : 2 

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 336 KB

Заявка : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 43V, Izt = 30mA 

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