Путь:OKDatasheet > Полупроводниковые Datasheet > ON Semiconductor Datasheet > MJD122-1
MJD122-1 спецификации: NPN transistor for high DC current gain, 100V, 8A
Аналогичные MJD122-1
- MJD112-1
- Complementary Darlington Power Transistors
- MJD112RL
- Complementary Darlington Power Transistors
- MJD112T4
- Complementary Darlington Power Transistors
- MJD117
- Complementary Darlington Power Transistors
- MJD122
- Complementary Darlington Power Transistors
- MJD122
- NPN transistor for high DC current gain, 100V, 8A
- MJD122-1
- NPN transistor for high DC current gain, 100V, 8A
- MJD122-1
- NPN transistor for high DC current gain, 100V, 8A
MJD122-1 Datasheet и спецификация
Производитель : ON Semiconductor
Упаковка : TO-251
Pins : 3
Темп. диапазон : Минимум -65 °C | Макс 150 °C
Размер : 150 KB
Заявка : NPN transistor for high DC current gain, 100V, 8A
MJD122-1 Скачать PDF