MGW21N60ED спецификации: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

Аналогичные MGW21N60ED

MGW20N120
- Insulated Gate Bipolar Transistor N-Channel
MGW21N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGW21N60ED Datasheet и спецификация

Производитель : ON Semiconductor

Упаковка : TO-247

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 167 KB

Заявка : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel