MGW12N120D спецификации: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

Аналогичные MGW12N120D

MGW12N120
- Insulated Gate Bipolar Transistor N-Channel
MGW12N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW14N60ED
- Insulated Gate Bipolar Transistor

MGW12N120D Datasheet и спецификация

Производитель : ON Semiconductor

Упаковка : TO-247

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 184 KB

Заявка : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel