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BUL45D2 спецификации: High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
Аналогичные BUL45D2
- BUL44
- SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
- BUL44D2
- High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
- BUL45D2
- High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
- BUL45F
- NPN Silicon Power Transistor
BUL45D2 Datasheet и спецификация
Производитель : ON Semiconductor
Упаковка : TO-220
Pins : 3
Темп. диапазон : Минимум 0 °C | Макс 0 °C
Размер : 488 KB
Заявка : High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
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