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Аналогичные NTE65101

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    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
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    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
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NTE65101 Datasheet и спецификация

Производитель : NTE Electronic 

Упаковка : DIP 

Pins : 22 

Темп. диапазон : Минимум -40 °C | Макс 85 °C

Размер : 32 KB

Заявка : Integrated circuit. 256 x 4 bit static RAM (SRAM). 

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