Путь:OKDatasheet > Полупроводниковые Datasheet > NTE Electronic Datasheet > NTE6251
NTE6251 спецификации: Silicon rectifier. Dual, positive center tap. Max repetitive peak reverse voltage 200V. Max average forward rectified current 30A.
Аналогичные NTE6251
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6251 Datasheet и спецификация
Производитель : NTE Electronic
Упаковка :
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 20 KB
Заявка : Silicon rectifier. Dual, positive center tap. Max repetitive peak reverse voltage 200V. Max average forward rectified current 30A.
NTE6251 Скачать PDF