Путь:OKDatasheet > Полупроводниковые Datasheet > NTE Electronic Datasheet > NTE6093
NTE6093 спецификации: Silicon dual schottky barrier rectifier. Max peak repetitive reverse voltage 60V. Average rectified forward current(per diode) 30A.
Аналогичные NTE6093
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6093 Datasheet и спецификация
Производитель : NTE Electronic
Упаковка : TO3P
Pins : 3
Темп. диапазон : Минимум -65 °C | Макс 125 °C
Размер : 19 KB
Заявка : Silicon dual schottky barrier rectifier. Max peak repetitive reverse voltage 60V. Average rectified forward current(per diode) 30A.
NTE6093 Скачать PDF