NTE5869 спецификации: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.

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NTE5869 Datasheet и спецификация

Производитель : NTE Electronic

Упаковка : DO4

Pins : 2

Темп. диапазон : Минимум -65 °C | Макс 175 °C

Размер : 26 KB

Заявка : Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.