Путь:OKDatasheet > Полупроводниковые Datasheet > NTE Electronic Datasheet > NTE5593
NTE5593 спецификации: Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 1600V. RMS on-state current It(rms) = 550A.
Аналогичные NTE5593
- NTE5198A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 24V. Zener test current Izt = 105mA."
- NTE5183A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 8.2V. Zener test current Izt = 305mA."
- NTE5945
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 15A.
- NTE5227A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 160V. Zener test current Izt = 16mA."
- NTE5914
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A.
- NTE5045A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 68V, Zener test current Izt = 1.8mA."
- NTE5322W
- "Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 200V."
- NTE5001A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 2.5V, Zener test current Izt = 20mA."
NTE5593 Datasheet и спецификация
Производитель : NTE Electronic
Упаковка :
Pins : 4
Темп. диапазон : Минимум -40 °C | Макс 125 °C
Размер : 26 KB
Заявка : Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 1600V. RMS on-state current It(rms) = 550A.
NTE5593 Скачать PDF