NTE3312 спецификации: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.

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NTE3312 Datasheet и спецификация

Производитель : NTE Electronic

Упаковка :

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 150 °C

Размер : 19 KB

Заявка : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.