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NTE2319 спецификации: Silicon NPN transistor. High voltage, high speed power switch.
Аналогичные NTE2319
- NTE2003
- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
- Integrated circuit. 7-channel darlington array/driver.
- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE2319 Datasheet и спецификация
Производитель : NTE Electronic
Упаковка : TO3
Pins : 2
Темп. диапазон : Минимум -65 °C | Макс 200 °C
Размер : 28 KB
Заявка : Silicon NPN transistor. High voltage, high speed power switch.
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