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NTE2309 спецификации: Silicon NPN transistor. High voltage, high current switch.
Аналогичные NTE2309
- NTE2003
- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
- Integrated circuit. 7-channel darlington array/driver.
- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE2309 Datasheet и спецификация
Производитель : NTE Electronic
Упаковка :
Pins : 3
Темп. диапазон : Минимум 0 °C | Макс 150 °C
Размер : 24 KB
Заявка : Silicon NPN transistor. High voltage, high current switch.
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