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NTE213 спецификации: Germanium PNP transistor. High power, high gain amplifier.
Аналогичные NTE213
- NTE2003
- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
- Integrated circuit. 7-channel darlington array/driver.
- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE213 Datasheet и спецификация
Производитель : NTE Electronic
Упаковка : TO36
Pins : 2
Темп. диапазон : Минимум -65 °C | Макс 110 °C
Размер : 25 KB
Заявка : Germanium PNP transistor. High power, high gain amplifier.
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