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NTE2102 спецификации: Integrated circuit. NMOS, 1K static RAM (SRAM), 35ns.
Аналогичные NTE2102
- NTE2003
- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
- Integrated circuit. 7-channel darlington array/driver.
- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE2102 Datasheet и спецификация
Производитель : NTE Electronic
Упаковка : DIP
Pins : 16
Темп. диапазон : Минимум 0 °C | Макс 70 °C
Размер : 30 KB
Заявка : Integrated circuit. NMOS, 1K static RAM (SRAM), 35ns.
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