Аналогичные MTW33N10E

  • MTW32N20E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW32N25E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW32N25E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW33N10E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW35N15E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW33N10E Datasheet и спецификация

Производитель : Motorola 

Упаковка : TO-247AE 

Pins : 4 

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 249 KB

Заявка : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole 

MTW33N10E Скачать PDF