MTW10N100E спецификации: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

Аналогичные MTW10N100E

MTW10N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
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MTW10N100E Datasheet и спецификация

Производитель : Motorola

Упаковка : TO-247AE

Pins : 4

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 211 KB

Заявка : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole