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MJE5730 спецификации: High-voltage PNP silicon power transistor
Аналогичные MJE5730
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- Plastic medium power NPN silicon transistor
- MJE5730
- High-voltage PNP silicon power transistor
- MJE5731
- High-voltage PNP silicon power transistor
- MJE5731A
- High-voltage PNP silicon power transistor
- MJE5740
- NPN silicon power darlington transistor
- MJE5741
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- MJE5742
- NPN silicon power darlington transistor
- MJE5850
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MJE5730 Datasheet и спецификация
Производитель : Motorola
Упаковка :
Pins : 4
Темп. диапазон : Минимум -65 °C | Макс 150 °C
Размер : 208 KB
Заявка : High-voltage PNP silicon power transistor
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