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BUL44D2 спецификации: High speed, high gane bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
Аналогичные BUL44D2
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- BUL44D2
- High speed, high gane bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
- BUL45
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- BUL45D2
- High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL44D2 Datasheet и спецификация
Производитель : Motorola
Упаковка :
Pins : 4
Темп. диапазон : Минимум -65 °C | Макс 150 °C
Размер : 554 KB
Заявка : High speed, high gane bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
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