BUZ906X4S спецификации: P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.

Аналогичные BUZ906X4S

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ906X4S Datasheet и спецификация

Производитель : Magnatec

Упаковка : SOT227

Pins : 4

Темп. диапазон : Минимум 0 °C | Макс 150 °C

Размер : 36 KB

Заявка : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.