Аналогичные BUZ906DP

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    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
  • BUZ906D
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
  • BUZ902D
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ908
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ901X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ900X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ906DP Datasheet и спецификация

Производитель : Magnatec 

Упаковка : TO-3PBL 

Pins : 3 

Темп. диапазон : Минимум 0 °C | Макс 150 °C

Размер : 42 KB

Заявка : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. 

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