BUZ901DP спецификации: N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.

Аналогичные BUZ901DP

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ901DP Datasheet и спецификация

Производитель : Magnatec

Упаковка : TO-3PBL

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 150 °C

Размер : 42 KB

Заявка : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.