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BUL52A спецификации: Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
Аналогичные BUL52A
- BUL52A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL52B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52A Datasheet и спецификация
Производитель : Magnatec
Упаковка : TO220
Pins : 3
Темп. диапазон : Минимум 0 °C | Макс 150 °C
Размер : 20 KB
Заявка : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
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