| Name component | Производитель | Заявка |
|---|
| 1.5KE33 | MDE Semiconductor | 26.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MAX40-140.0C | MDE Semiconductor | 140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SAC45 | MDE Semiconductor | 45.00V; 6.8A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
| MAX-422 | MDE Semiconductor | 379.8V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
| P6KE27 | MDE Semiconductor | 21.80V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SAC36 | MDE Semiconductor | 36.00V; 8.6A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
| MDE-5D560K | MDE Semiconductor | 56V; max peak current250A; metal oxide varistor. Standard D series 5mm disc |
| 30KW42A | MDE Semiconductor | 42.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| P6KE82 | MDE Semiconductor | 66.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-150.0C | MDE Semiconductor | 150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 20KW68A | MDE Semiconductor | 68.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 3T110B | MDE Semiconductor | 90V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
| 15KW18A | MDE Semiconductor | 18.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| P6KE39A | MDE Semiconductor | 33.30V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| LCE8.5A | MDE Semiconductor | 8.50V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| MAX20-120.0CA | MDE Semiconductor | 120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-7D680M | MDE Semiconductor | 68V; max peak current500A; metal oxide varistor. Standard D series 7mm disc |
| SMDJ48A | MDE Semiconductor | 48.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ45 | MDE Semiconductor | 45.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-34S471K | MDE Semiconductor | 470V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
| 1.5KE400 | MDE Semiconductor | 324.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMAJ150 | MDE Semiconductor | 150.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ110A | MDE Semiconductor | 110.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-10D221K | MDE Semiconductor | 220V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| MDE-53D951K | MDE Semiconductor | 950V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| SMDJ75A | MDE Semiconductor | 75.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KP200A | MDE Semiconductor | 200V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX20-6.5C | MDE Semiconductor | 6.50V; 50mA ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ18 | MDE Semiconductor | 18.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-8.0C | MDE Semiconductor | 8.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
