Путь:okDatasheet > Полупроводниковые Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-27
MDE-25S431K P6KE24 SA120 MAX20-130.0C 15KP90 MDE-20D330K 3KP14A MAX20-90.0CA SMLJ90A SMBJ11 MAX40-6.5C P6KE62A MAX40-13.0C MAX20-30.0CA SMCJ20 SMAJ58A 1N6373 3T150A SA36 SMLJ12 SMBJ8.5 MAX40-75.0CA 1.5KE12 MDE-34S431K 1.5KE160 MDE-7D181M MAX40-40.0CA MDE-25D361K
| Name component | Производитель | Заявка |
|---|---|---|
| SMAJ150A | MDE Semiconductor | 150.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-30.0C | MDE Semiconductor | 30.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-25S431K | MDE Semiconductor | 430V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| P6KE24 | MDE Semiconductor | 19.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SA120 | MDE Semiconductor | 120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-130.0C | MDE Semiconductor | 130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP90 | MDE Semiconductor | 90V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-20D330K | MDE Semiconductor | 33V; max peak current3000A; metal oxide varistor. Standard D series 20mm disc |
| 3KP14A | MDE Semiconductor | 14.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX20-90.0CA | MDE Semiconductor | 90.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMLJ90A | MDE Semiconductor | 90.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ11 | MDE Semiconductor | 11.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-6.5C | MDE Semiconductor | 6.50V; 50mA ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE62A | MDE Semiconductor | 53.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-13.0C | MDE Semiconductor | 13.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-30.0CA | MDE Semiconductor | 30.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ20 | MDE Semiconductor | 20.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ58A | MDE Semiconductor | 58.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1N6373 | MDE Semiconductor | 5.00V; 160A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 3T150A | MDE Semiconductor | 140V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
| SA36 | MDE Semiconductor | 36.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMLJ12 | MDE Semiconductor | 12.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ8.5 | MDE Semiconductor | 8.50V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-75.0CA | MDE Semiconductor | 75.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE12 | MDE Semiconductor | 9.72V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MDE-34S431K | MDE Semiconductor | 430V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
| 1.5KE160 | MDE Semiconductor | 130.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MDE-7D181M | MDE Semiconductor | 180V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
| MAX40-40.0CA | MDE Semiconductor | 40.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-25D361K | MDE Semiconductor | 360V; max peak current20000A; metal oxide varistor. Standard D series 25mm disc |