TMV1412 спецификации: Diode capacitance8-12pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor

Аналогичные TMV1412

TMV1402
- Diode capacitance45-69pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
TMV1402
- Diode capacitance45-69pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
TMV1403
- Diode capacitance140-210pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
TMV1404
- Diode capacitance96-144pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
TMV1405
- Diode capacitance200-300pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
TMV1406
- Diode capacitance80-120pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
TMV1407
- Diode capacitance54-82pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
TMV1408
- Diode capacitance37-57pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor

TMV1412 Datasheet и спецификация

Производитель : Knox Semiconductor

Упаковка :

Pins : 0

Темп. диапазон : Минимум -55 °C | Макс 125 °C

Размер : 37 KB

Заявка : Diode capacitance8-12pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor